[1] P. H. O. Rappl and P. J. McCann, "Development of a Novel Epitaxial Layer Segmentation Method for Optoelectronic Device Fabrication", IEEE Photonics Technology Letters 15, 374 (2003). (pdf 406.2 KB)

[2] C. B. Roller, K. Namjou, J. Jeffers, M. Camp, P. J. McCann, and J. Grego, "Nitric Oxide Breath Testing Using Tunable Diode Laser Absorption Spectroscopy: Application in Respiratory Inflammation Monitoring", Applied Optics 41, 6018 (2002). (pdf 468KB)

[3] H. Z. Wu, N. Dai, and P. J. McCann, "Experimental determination of deformation potentials and band nonparabolicity parameters for PbSe", Physical Review B 66, 045303 (2002). [Also selected to appear in Virtual Journal of Nanoscale Science & Technology, www.vjnano.org, July 22, 2002] (pdf 98KB)

[4] W. Z. Shen, H. Z. Wu, and P. J. McCann, "Excitonic line broadening in PbSrSe thin films grown by molecular beam epitaxy", J. Applied Physics 91, 3621 (2002). (pdf 79KB)

[5] C. B. Roller, K. Namjou, J. Jeffers, W. Potter, P. J. McCann, and J. Grego, "Simultaneous NO and CO2 Measurements in Human Breath Using a Single IV-VI Mid-Infrared Laser", Optics Letters 27, 107 (2002). (pdf 93KB)

[6] W. Z. Shen, H. F. Yang, L. F. Jiang, K. Wang, G. Yu, H. Z. Wu and P. J. McCann, "Band gaps, effective masses and refractive indices of PbSrSe thin films: Key properties for mid-infrared optoelectronic device applications", J. Applied Physics 91, 192 (2002). (pdf 127KB)

[7] C. B. Roller, K. Namjou, P. J. McCann, and J. Jeffers, "A Novel Instrument for Asthma Screening", Annals of Allergy, Asthma & Immunology 88, 71 (2002).

[8] W. Z. Shen, K. Wang, L. F. Jiang X. G. Wang, S. C. Shen H. Z. Wu, and P. J. McCann, "Study of Band Structure in PbSe/PbSrSe Quantum Wells for Midinfrared Laser Applications", Applied Physics Letters 79, 2579 (2001). (pdf 54KB)

[9] S. Krishna, P. Bhattacharya, J. Singh, T. Norris and J. Urayama, P.J. McCann and K. Namjou, "Intersubband Gain and Stimulated Emission in Long Wavelength ( =13 m) Intersubband Quantum Dot Emitters", IEEE. J. Quantum Electronics 37, 1066 (2001).

[10] H. Z. Wu, P. J. McCann, O. Alkhouli, X. M. Fang, D. McAlister, K. Namjou, N. Dai, S. J. Chung, and P. H. O. Rappl "Molecular beam epitaxial growth of IV-VI multiple quantum well structures on Si(111) and BaF2(111) and optical studies of epilayer heating", Journal of Vacuum Science and Technology B 19, 1447 (2001). (pdf 210KB)

[11] H. Z. Wu, N. Dai, M. B. Johnson, P. J. McCann, Z. S. Shi, "Unambiguous Observation of Subband Transitions from Longitudinal Valley and Oblique Valleys in IV-VI multiple Quantum Wells", Applied Physics Letters 78, 2199 (2001). ( pdf 53.7KB)

[12] D. W. McAlister, P. J. McCann, K. Namjou, H. Z. Wu and X. M. Fang, "Mid-IR Photoluminescence from IV-VI Layers Grown on Silicon", Journal of Applied Physics 89, 3514 (2001). (pdf 46.6KB)

[13] P. Bhattacharya, S. Krishna, J. Phillips, P. J. McCann and K. Namjou, "Carrier dynamics in self-organized quantum dots and their application to long-wavelength sources and detectors", J. Crystal Growth 227-228, 27 (2001).

[14] P. J. McCann, K. Namjou, I. Chao, "Mid-IR Lasers and Their Use in Semiconductor Process Monitoring", Journal of Process Analytical Chemistry 5, 142 (2000).

[15] A. L. Yang, H. Z. Wu, Z. F. Li, Y. Chang, J. F. Li, P. J. McCann, X. M. Fang, "Raman Scattering Study of PbSe Grown on (111) BaF2 Substrate", Chinese Physics Letters 17, 606 (2000).

[16] S. Krishna, P. K. Bhattacharya, P. J. McCann, and K. Namjou, "Room-Temperature Long Wavelength ( =13.3 µm) Unipolar Quantum Dot Intersubband Laser", Electronics Letters 36, 1550 (2000).

[17] Z. Shi, G. Xu, P. J. McCann, X. M. Fang, N. Dai, C. L. Felix, W. W. Bewley, I. Vurgaftman, and J. R. Meyer, "IV-VI Compound Mid-Infrared High-Reflectivity Mirrors and Vertical-Cavity Surface-Emitting Lasers Grown by Molecular Beam Epitaxy", Applied PhysicsLetters 76, 3688 (2000). (pdf 147KB)

[18] X. M. Fang, K. Namjou, I. Chao, P. J. McCann, N. Dai, and G. Tor, "Molecular Beam Epitaxy of PbSrSe and PbSe/PbSrSe Multiple Quantum Well Structures for use in Mid-Infrared Light Emitting Devices", Journal of Vacuum Science and Technology 18, 1720 (2000). (pdf 64KB)

[19] S. Krishna, O. Qasaimeh, P. K. Bhattacharya, P. J. McCann, and K. Namjou, "Room-Temperature Far Infrared Emission from Self Organized InGaAs/GaAs Quantum Dot Laser", Applied Physics Letters 76, 3355 (2000).

[20] G. Xu, X. M. Fang, P. J. McCann and Z. Shi, "MBE Growth of Wide Band Gap Pb1-xSrxSe on Si(111) Substrate", Journal of Crystal Growth 209, 763 (2000).

[21] D. W. McAlister, P. J. McCann, H. Z. Wu and X. M. Fang, "Fabrication of Thin Film Cleaved Cavities Using a Bonding and Cleaving Fixture", IEEE Photonics Technology Letters 12, 22 (2000). (pdf 49KB)

[22] C. P. Li, P. J. McCann, and X. M. Fang, "Strain Relaxation in PbSnSe and PbSe/PbSnSe Layers Grown by Liquid Phase Epitaxy on (100)-Oriented Silicon", Journal of Crystal Growth 208, 423 (2000).

[23] P. J. McCann, K. Namjou, and X. M. Fang, "Above-Room-Temperature Continuous Wave Mid-Infrared Photoluminescence from PbSe/PbSrSe Quantum Wells", Applied Physics Letters 75, 3608 (1999). (pdf 57KB)

[24] H. Z. Wu, X. M. Fang, R. Salas, D. McAlister, and P. J. McCann, "Transfer of PbSe/PbEuSe Epilayers Grown by MBE on BaF2-Coated Si(111)", Thin Solid Films 352, 277 (1999).

[25] P. J. McCann, I. Chao, H. Sachar, D. McAlister, C. P. Li, X. M. Fang, H. Wu, and K. Namjou, "IV-VI Semiconductor Growth on Silicon Substrates and New Mid-Infrared Laser Fabrication Methods" Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy 55, 1999 (1999).

[26] X. M. Fang, H. Z. Wu, N. Dai, Z. Shi, and P. J. McCann, "Molecular Beam Epitaxy of Periodic BaF2/PbEuSe Layers on Si(111)", Journal of Vacuum Science and Technology B 17, 1297 (1999).

[27] H. Z Wu, X. M. Fang, D. McAlister, R. Salas, Jr., and P. J. McCann, "Molecular Beam Epitaxy Growth of PbSe on BaF2-Coated Si(111) and Observation of the PbSe Growth Interface", Journal of Vacuum Science and Technology B 17, 1263 (1999). (pdf 188KB)

[28] H. K. Sachar, I. Chao, P. J. McCann, and X. M. Fang, "Growth and Characterization of PbSe and Pb1-xSnxSe on Si(100)", Journal of Applied Physics 85, 7398 (1999). (pdf 205 KB)

[29] P. J. McCann, "New Fabrication Method Promises Higher Mid-IR Laser Operating Temperatures", Compound Semiconductor 5 (4), 57 (May 1999).

[30] P. J. McCann, K. Namjou, and I-Na Chao, "Using Mid-IR Lasers in Semiconductor Manufacturing", MICRO 71, 93 (July/August, 1999). click here for detail.

[31] M. F. Khodr, P. J. McCann, and B. A. Mason, "Optimizing and Engineering EuSe/PbSe0.78Te0.22/EuSe Multiple Quantum Well Lasers", IEEE Journal of Quantum Electronics 94, 1604 (1998). (pdf 156KB)

[32] T. Chatterjee, P. J. McCann, X. M. Fang, and M. B. Johnson "Eu:CaF2 Layers on p-Si(100) Grown Using Molecular Beam Epitaxy as Materials for Si-Based Optoelectronics", Journal of Vacuum Science and Technology B 16, 1463 (1998). (pdf 410 KB)

[33] X. M. Fang, I-Na Chao, B. N. Strecker, P. J. McCann, S. Yuan, W. K. Liu, and M. B. Santos, "Molecular Beam Epitaxial Growth of Bi2Se3- and Tl2Se-Doped PbSe and PbEuSe on CaF2/Si(111)", Journal of Vacuum Science and Technology B 16, 1459 (1998). (pdf 82KB)

[34] I. Chao, P. J. McCann, W. Yuan, E. A. O'Rear, and S. Yuan, "Growth and Characterization of IV-VI Semiconductor Heterostructures on (100) BaF2", Thin Solid Films 323, 126 (1998).

[35] T. Chatterjee, P. J. McCann, X. M. Fang, J. Remington, M. B. Johnson, and C. Michellon, "Visible Electroluminescence from Eu:CaF2 Layers Grown by Molecular Beam Epitaxy on p-Si(100)", Applied Physics Letters 71, 3610 (1997). (pdf 68KB)

[36] Z. Yang, Y. H. Chen, J. Y. L. Ho, W. K. Liu, X. M. Fang, and P. J. McCann, "Determination of Interface Layer Strain of Si/SiO2 Interfaces by Reflectance Difference Spectroscopy", Applied Physics Letters 71, 87 (1997). ( pdf 643 KB)

[37] P. J. McCann, X. M. Fang, W. K. Liu, B. N Strecker, and M. B. Santos, "MBE Growth of PbSe/CaF2/Si(111) Heterostructures", Journal of Crystal Growth 175/176, 1057 (1997).

[38] B. N. Strecker, P. J. McCann, X. M. Fang, R. J. Hauenstein, M. O'Steen, and M. B. Johnson, "LPE Growth of Crack-Free PbSe Layers on (100)-Oriented Silicon Using MBE-Grown PbSe/BaF2/CaF2 Buffer Layers", Journal of Electronic Materials 26, 444 (1997).

[39] W. K. Liu, X. M. Fang, J. Winesett, W. Ma, X. Zhang, M. B. Santos, and P. J. McCann, "Large-Mismatch Heteroepitaxy of InSb on Si Substrates Using Fluoride Buffer Layers", Journal of Crystal Growth 175/176, 853 (1997).

[40] S. Yuan, H. Krenn, G. Springholtz, Y. Ueta, G. Bauer, P. J. McCann, "Magnetoreflectivity of Pb1-xEuxTe Epilayers and PbTe/Pb1-xEuxTe Multi-Quantum Wells", Physical Review B 55, 4607 (1997). (pdf 282KB)

[41] W. K. Liu, J. Winesett, W. Ma, X. Zhang, M. B. Santos, X. M. Fang, and P. J. McCann, "Molecular Beam Epitaxy of InSb on Si Substrates Using Fluoride Buffer Layers", Journal of Applied Physics 81, 1708 (1997). (pdf 512 KB)

[42] K. R. Lewelling and P. J. McCann, "Finite Element Modeling Predicts Possibility of Thermoelectrically-Cooled Lead-Salt Diode Lasers", IEEE Photonics Technology Letters 9, 297 (1997). (pdf 48KB)

[43] W. K. Liu, X. M. Fang, Wei-Li Yuan, M. B. Santos, T. Chatterjee, P. J. McCann, E. A. O'Rear, "Initial Growth of CaF2 and BaF2/CaF2 on Si(110) During Molecular Beam Epitaxy", Journal of Crystal Growth 167, 111 (1996).

[44] X. M. Fang, T. Chatterjee, P. J. McCann, W. K. Liu, M. B. Santos, W. Shan, and J. J. Song, "Molecular Beam Epitaxial Growth of Eu-Doped CaF2 and BaF2 on Silicon", Journal of Vacuum Science and Technology B 14, 2267 (1996). (pdf 137KB)

[45] M. F. Khodr, P. J. McCann, and B. A. Mason, "Effects of Nonparabolicity on the Gain and Current Density in EuSe/PbSe0.78Te0.22/EuSe IV-VI Semiconductor Quantum Well Lasers", IEEE Journal of Quantum Electronics 32, 236 (1996).

[46] X. M. Fang, P. J. McCann, W. K. Liu, , "Growth Studies of CaF2 and BaF2/CaF2 Layers on (100) Silicon Using RHEED and SEM", Thin Solid Films 272, 87 (1996).

[47] X. M. Fang, T. Chatterjee, P. J. McCann, W. K. Liu, M. B. Santos, W. Shan, J. J. Song, "Eu-Doped CaF2 Grown on Si(100) Substrates by Molecular Beam Epitaxy", Applied Physics Letters 67, 1891 (1995). (pdf 408KB)

[48] W. K. Liu, X. M. Fang, P. J. McCann, "Reflection High Energy Diffraction Study of the Molecular Beam Epitaxy Growth of CaF2 on (110) Silicon", Applied Physics Letters 67, 1695 (1995). (pdf 286 KB)

[49] M. F. Khodr, P. J. McCann, and B. A. Mason, "Gain and Current Density Calculation in IV-VI Quantum Well Lasers", Journal of Applied Physics 77, 4927 (1995). (pdf 545 KB)

[50] P. J. McCann, L. Li, J. Furneaux, and R. Wright, "Optical Properties of Ternary and Quaternary IV-VI Semiconductor Layers on (100) BaF2 Substrates", Applied Physics Letters 66, 1355 (1995). (pdf 72 KB)

[51] P. J. McCann, S. Aanegola, and J. E. Furneaux, "Growth and Characterization of Thallium and Gold Doped PbSe0.78Te0.22 Layers Lattice Matched with BaF2 Substrates", Applied Physics Letters 65, 2185 (1994).

[52] P. J. McCann and S. Aanegola, "The Role of Graphite Boat Design in Liquid Phase Epitaxial Growth of PbSe0.78Te0.22 on BaF2", Journal of Crystal Growth 141, 376 (1994).

[53] P. J. McCann and D. Zhong, "Liquid Phase Epitaxy Growth of Pb1-xSnxSe1-yTey Alloys Lattice Matched with BaF2", Journal of Applied Physics 75, 1145 (1994). ( pdf 716 KB)

[54] P. J. McCann and C. G. Fonstad, "Growth of PbSe0.78Te0.22 Lattice Matched with BaF2", Thin Solid Films 227, 185 (1993).

[55] P. J. McCann and C. G. Fonstad, "Liquid Phase Epitaxy Growth of PbSe on (111) and (100) Barium Fluoride", Journal of Crystal Growth 114, 687 (1991).

[56] P. J. McCann and C. G. Fonstad, "Auger Electron Spectroscopic Analysis of Barium Fluoride Surfaces Exposed to Selenium Vapor", Journal of Electronic Materials 20, 915 (1991).

[57] P. J. McCann, J. Fuchs, Z. Feit and C. G. Fonstad, "Phase Equilibria and Liquid Phase Epitaxy Growth of PbSnSeTe Lattice Matched to PbSe", Journal of Applied Physics 62, 2994 (1987).

[59] Peter Möck, T. Topuria, N. D. Browning, K. Pierz, P. J. McCann, H. Wu, "Atomic Ordering in Self-assembled Epitaxial II-VI and IV-VI Compound Semiconductor QD Systems" Morphological and Compositional Evolution of Thin Films, p. W13.5.1, Materials Research Society, Pittsburgh, PA (2003). (Mat. Res. Symp. Proc. 749, W13.5.1 (2003).

[60] M. Camp, J. D. Jeffers, C. Roller, K. Namjou, and P. J. McCann, "Exhaled Nitric Oxide Measured using Tunable Diode Laser Absorption Spectroscopy: Insensitivity to High Atmospheric Nitric Oxide", ACAAI 2002 Annual Meeting, p. 11 American College of Allergy, Asthma & Immunology, Arlington Heights, IL (2002).

[61] K. Namjou, C. Roller, J. Jeffers, W. Potter, P. J. McCann, and J. Grego, "Exhaled Nitric Oxide Measured Using Mid-Infrared Spectroscopy", 32nd International Conference on Environmental Systems (ICES), CD-ROM, Society of Automotive Engineers, Warrendale, PA (2002).

[62] A. Mock, C. Roller, J. Jeffers, K. Namjou, P. J. McCann, J. Grego, "Real-Time Ground Level Atmospheric Nitric Oxide Measured by Calibrated TDLAS System", Laser Applications to Chemical and Environmental Analysis, (Vol. 64: LACEA Technical Digest), p. SaC4-1, Optical Society of America, Washington, D.C. (2002).

[63] C. Roller, K. Namjou, J. Jeffers, A. Mock, P. J. McCann, J. Grego" Longitudinal Studies of Nitric Oxide and Carbon Dioxide in Human Breath with a Single IV-VI Mid-IR Laser", Laser Applications to Chemical and Environmental Analysis, (Vol. 64: LACEA Technical Digest), p. ThC3-1, Optical Society of America, Washington, D.C. (2002).

[64] J. Jeffers, P. J. McCann, K. Namjou, C. Roller, Z. Debebe, and J. Grego, "New Widely-Tunable Mid-IR Lasers and Their Use in Molecular Spectroscopy", Instrumentation for Air Pollution and Global Atmospheric Monitoring, Proceedings of SPIE 4574, 201 (2002).

[65] F. Zhao, H. Wu, T. Zheng, P. J. McCann, A. Majumdar, Lalith Jayasinghe, and Z. Shi, "Optical Characterization of IV-VI Mid-Infrared VCSELs", Progress in Semiconductor Materials for Optoelectronic Applications, p. H7.8.1, Materials Research Society, Pittsburgh, PA (2002). (Mat. Res. Symp. Proc. 692, H7.8.1 (2002).

[66] J. D. Jeffers, C. Roller, P. J. McCann, K. Namjou, "Fourier Transform Spectrometer for High Resolution Characterization of Mid-IR IV-VI Diode Lasers", Fourier Transform Spectroscopy, p. 44, Optical Society of America, Washington, D.C. (2001).

[67] C. Roller, P. J. McCann, J. D. Jeffers, K. Namjou, "Temperature Tuning Mid-IR IV-VI Diode Lasers to Measure C6H6 and C7H8 Broad Absorption Bands", Optical Remote Sensing of the Atmosphere, p. 153, Optical Society of America, Washington, D.C. (2001).

[68] P. Bhattacharya, S. Krishna, J. D. Phillips, D. Klotzkin, P. J. McCann, " Quantum dot carrier dynamics and far-infrared devices", Optoelectronic Materials and Devices II, Proceedings of SPIE 4078, 84 (2000).

[69] P. Bhattacharya, S. Krishna, D. Zhu, J. Phillips, D. Klotzkin, O. Qasaimeh, W. D. Zhou, J. Singh, P. J. McCann, K. Namjou, "Optoelectronic Device Applications of Self-Organized In(Ga,Al)As/Ga(Al)As Quantum Dots", Spring Materials Research Society Meeting, San Francisco, CA, April 24-28, 2000. (in press).

[70] P. J. McCann, I. Chao, and K. Namjou, "Measurement of NO, COF2, and H2O with a single mid-infrared laser", Laser Applications to Chemical and Environmental Analysis, p. 84, Optical Society of America, Washington, D.C. (2000).

[71] K. Namjou, P. J. McCann, W. T. Potter, "Breath testing with a Mid-IR Laser Spectrometer", SPIE Conference on Application of Tunable Diode and Other Infrared Sources for Atmospheric Studies and Industrial Processing Monitoring II, Proceedings of SPIE 3758, 74 (1999). (pdf 947KB)

[72] H. K. Sachar, I. Chao, X. M. Fang, and P. J. McCann, "Growth and Characterization of PbSe and Pb1-xSexSe Layers on Si(100)", Infrared Applications of Semiconductors II, p. 371, Editors: S. Sivananthan, M. O. Manasreh, R. H. Miles, D. L. McDaniel, Jr., Materials Research Society, Pittsburgh, PA (1998). (Mat. Res. Soc. Symp. Proc. 484, 371 (1998).

[73] H. K. Sachar, P. J. McCann, and X. M. Fang, "Strain Relaxation in IV-VI Semiconductor Layers Grown on Silicon (100) Substrates", Thin-Films - Stresses and Mechanical Properties VII, p. 185, Editors: R. C. Cammarata, M. Nastasi, E. P. Busso, and W. C, Oliver, Materials Research Society, Pittsburgh, PA (1998). (Mat. Res. Soc. Symp. Proc. 505, 185 (1998).

[74] X. M. Fang, I. Chao, B. N Strecker, P. J. McCann, S. Yuan, W. K. Liu, and M. B. Santos, "MBE Growth of PbEuSe on CaF2/Si(111)", Proceeding of the Eighth International Conference on Narrow Gap Semiconductors, p. 101, Editors: S. C. Shen, D. Y. Tang, G.Z. Zheng, and G. Bauer, World Scientific, Singapore (1998).

[75] T. Chatterjee, C. Michellon, P. J. McCann, and X. M. Fang, "Europium Doped CaF2 as a Materials System for Blue-Violet Light Emitting Structures on Silicon", Amorphous and Crystalline Insulating Thin Films, p. 423, Editors: W. L. Warren, J. Kanicki, R. A. B. Devine, M. Matsumura, S. Cristoloveanu, and Y. Homma, Materials Research Society, Pittsburgh, PA (1997). (Mat. Res. Soc. Symp. Proc. 446,423 (1997).

[76] X. M. Fang, W. K. Liu, W. Shan, T. Chatterjee, P. J. McCann, M. B. Santos, and J. J. Song, "Optical Characterization of Europium-Doped Calcium Fluoride Thin Films Grown on Silicon by Molecular Beam Epitaxy", Amorphous and Crystalline Insulating Thin Films, p. 429, Editors: W. L. Warren, J. Kanicki, R. A. B. Devine, M. Matsumura, S. Cristoloveanu, and Y. Homma, Materials Research Society, Pittsburgh, PA (1997). (Mat. Res. Soc. Symp. Proc. 446, 429 (1997).

[77] X. M. Fang, W. K. Liu, P. J. McCann, B. N. Strecker, and M. B. Santos, "XPS Study of the PbSe/CaF2 (111) Interface Grown on Si by MBE", Infrared Applications of Semiconductors - Materials, Processing and Devices, p. 457, Editors: M. O. Manarsreh, T. H. Meyers, F. H. Julien, and J. E. Colon, Materials Research Society, Pittsburgh, PA (1997). (Mat. Res. Soc. Symp. Proc. 450, 457 (1997).

[78] K. R. Lewelling and P. J. McCann, "Progress Towards Development of a Thermoelectrically Cooled Lead-Salt Semiconductor Laser", Optical Remote Sensing for Environmental and Process Monitoring, Air and Waste Management Association, Pittsburgh, PA (1997).

[79] P. J. McCann and Kevin R. Lewelling, "Prospects for High Operating Temperature IV-VI Semiconductor Tunable Diode Lasers", Optical Remote Sensing for Environmental and Process Monitoring, p. 26, Air and Waste Management Association, Pittsburgh, PA (1996).

[80] P. J. McCann, L. Li, S. Yuan, and John E. Furneaux, "FTIR Characterization of IV-VI Semiconductors Grown by LPE on (100) BaF2", Narrow Gap Semiconductors 1995, p. 150, Institute of Physics Publishing Ltd., London (1995).

[81] S. Yuan, H. Krenn, G. Springholtz, G. Bauer, and P. J. McCann, "Magnetoreflectivity Study of Electron-LO Phonon Interaction in Pb1-xEuxTe and PbTe/Pb1-xEuxTe Multiquantum Wells", Narrow Gap Semiconductors 1995, p. 173, Institute of Physics Publishing Ltd., London (1995).

[82] I. Chao, S. Yuan, and P. J. McCann, "Growth and Characterization of PbSeTe/PbSnSeTe/PbSeTe Double Heterostructures", Proceedings of the 1995 International Semiconductor Device Research Symposium, Volume II, p. 505, University of Virginia, Charlottesville, VA (1995).

[83] P. J. McCann, S. Aanegola and J. E. Furneaux, "Electrical Properties of Thallium and Gold Doped PbSe0.78Te0.22 Layers Lattice Matched with BaF2 Substrates", Spring 1994 Electrochemical Society Meeting (State-of-the-Art Program on Compound Semiconductors), San Francisco, CA, May 26, 1994. Proceedings of the State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XX) and the Symposium on Large Area Wafer Growth and Processing for Electronic and Photonic Devices.

[84] P. J. McCann and L. Li, "Pb1-xSnxSe1-yTey Alloys Lattice Matched with BaF2: A New Materials System for Far-Infrared Device Fabrication", Proceedings of the 1993 International Semiconductor Device Research Symposium, Volume II, p. 615, University of Virginia, Charlottesville, VA (1993).

[85] P. J. McCann, "The Effect of Composition Dependent Lattice Strain on the Chemical Potential of Tellurium in Pb1-xSnxSe1-yTey Quaternary Alloys", Phase Transformations in Thin Films - Thermodynamics and Kinetics, p. 149, Editors: M. Atzmon, A. L. Greer, J. M. E. Harper, M. R. Libera, Materials Research Society, Pittsburgh, PA (1993). (Mat. Res. Soc. Symp. Proc. 311, 149 (1993).

[86] P. J. McCann, "The Role of Substrate Surface Reactions in Heteroepitaxy of PbSe on BaF2", Heteroepitaxy of Dissimilar Materials, p. 289, Editors: R. F. C. Farrow, J. P.Harbison, P. S. Percy, and A. Zangwill, Materials Research Society, Pittsburgh, PA (1991). (Mat. Res. Soc. Symp. Proc. 221, 289 (1991).

[1] P. J. McCann, T. Chatterjee, and X. M. Fang, "Europium-Containing Group IIa Fluoride Epitaxial Layer on Silicon", U. S. Patent Number 5,932,964, Issued August 4, 1999.

[2] P. J. McCann, "Method for Fabricating Semiconductor Laser", U. S. Patent Number 5,776,794, Issued July 7, 1998.

[3] P. J. McCann, "Apparatus for Fabricating Semiconductor Laser", U. S. Patent Number 5,629,097, Issued May 13, 1997.

[4] P. J. McCann, "High Temperature Semiconductor Diode Laser", U. S. Patent Number 5,454,002, Issued September 26, 1995.

[5] P. J. McCann and C. G. Fonstad, "A Chemical Method for the Modification of Substrate Surface to Accomplish Heteroepitaxial Crystal Growth", U. S. Patent Number 5,310,696, Issued May 10, 1994.