[1] C. B. Roller, J. D. Jeffers, K. Namjou , P. J. McCann , K. Gregory, and W. Filley, "Repeatable Measurements of Exhaled Nitric Oxide in Children and Adults Using Mid-IR Laser Absorption Spectroscopy", Association for the Advancement of Medical Instrumentation, Annual Conference & Expo, Long Beach, CA, June 14-17, 2003.

[2] P. J. McCann, "Exhaled Breath Measured using Tunable Diode Laser Absorption Spectroscopy (TDLAS)", Workshop on Exhaled Breath Biomarkers, American Thoracic Society, Toronto, Canada, December 13-16, 2002. (Power Point 2,260 KB)

[3] Peter Möck, T. Topuria, N. D. Browning, K. Pierz, P. J. McCann, H. Wu, "Atomic Ordering in Self-assembled Epitaxial II-VI and IV-VI Compound Semiconductor QD Systems" MRS, Fall Meeting, Boston, MA, December 2 - 6, 2002.

[4] M. Camp, J. D. Jeffers, C. Roller, K. Namjou, and P. J. McCann, "Exhaled Nitric Oxide Measured using Tunable Diode Laser Absorption Spectroscopy: Insensitivity to High Atmospheric Nitric Oxide Concentrations", American College of Allergy, Asthma & Immunology (ACAAI) Annual Meeting, San Antonio, TX, November 15-20, 2002. (Power Point 2,250KB)

[5] K. Namjou, C. Roller, J. Jeffers, W. Potter, P. J. McCann, and J. Grego, "Exhaled Nitric Oxide Measured Using Mid-Infrared Spectroscopy", 32nd International Conference on Environmental Systems (ICES), San Antonio, TX, July 15-18, 2002.

[6] P. J. McCann, H. Wu, and N. Dai, "Growth and Characterization of IV-VI Semiconductor Multiple Quantum Well Structures", Electronic Materials Conference, Santa Barbara, CA, June 26-28, 2002. (Power Point 1,860KB)

[7] A. Mock, C. Roller, J. Jeffers, K. Namjou, and P. J. McCann, "Real-Time Ground Level Atmospheric Nitric Oxide Measured by Calibrated TDLAS System", Eighth Topical Meeting on Laser Applications to Chemical and Environmental Analysis (LACEA), Optical Society of America, Boulder, CO, February 7-10, 2002.

[8] C. Roller, K. Namjou, J. Jeffers A. Mock, P. J. McCann, and J. Grego, "Longitudinal studies of nitric oxide and carbon dioxide in human breath with a single IV-VI mid-IR laser", Eighth Topical Meeting on Laser Applications to Chemical and Environmental Analysis (LACEA), Optical Society of America, Boulder, CO, February 7-10, 2002.

[9] C. Roller, K. Namjou, P. J. McCann, and J. Jeffers, "A Novel Instrument for Asthma Screening", American College of Allergy, Asthma & Immunology (ACAAI) Annual Meeting, Orlando, FL, November 16-20, 2001.

[10] P. J. McCann, K. Namjou, C. Roller, J. Jeffers, Z. Debebe, and J. Grego, "New Widely-Tunable Mid-IR Lasers and Their Use in Molecular Spectroscopy", SPIE International Symposium on Environmental and Industrial Sensing, Photonics Boston, Boston, MA, October 28 - November 2, 2001.

[11] J. D. Jeffers, C. Roller, P. J. McCann, and K. Namjou, "Software Analysis of IV-VI Diode Laser Emissions for Broad Band Absorption Spectroscopy", 3rd International Conference on Tunable Diode Laser Spectroscopy Zermatt, Switzerland, July 8 - 12, 2001.

[12] C. Roller, P. J. McCann, J. D. Jeffers, K. Namjou, "Temperature Tuning Mid-IR IV-VI Diode Lasers to Measure C6H6 and C7H8 Broad Absorption Bands", Fourier Transform Spectroscopy and Optical Remote Sensing of the Atmosphere, Optical Society of America Topical Meeting, Coeur d'Alene, ID, February 5-8, 2001.

[13] F. Zhao, H. Wu, T. Zheng, P. J. McCann, A. Majumdar, Lalith Jayasinghe, and Z. Shi, "Optical Characterization of IV-VI Mid-Infrared VCSELs", Fall Materials Research Society Meeting, Boston, MA, November 26-30, 2001.

[14] J. D. Jeffers, C. Roller, P. J. McCann, K. Namjou, "Fourier Transform Spectrometer for High Resolution Characterization of Mid-IR IV-VI Diode Lasers", Fourier Transform Spectroscopy and Optical Remote Sensing of the Atmosphere, Optical Society of America Topical Meeting, Coeur d'Alene, ID, February 5-8, 2001.

[15] P. Bhattacharya, S. Krishna, J. Singh, P. J. McCann and K. Namjou, "Long-Wavelength In(Ga)As/GaAs Quantum Dot Electroluminescent Devices", Photonics West, San Francisco, Jan 2001 (Invited).

[16] S. Krishna, D. Zhu, W. Zhou, O. Qasaimeh, P. Bhattacharya, P. J. McCann and K. Namjou, "Self Organized In0.4Ga0.6As/GaAs Quantum Dot Intersubband (~12 mm) Electroluminescent Devices", XIth International Conference on Molecular Beam Epitaxy, Beijing, China, September, 2000.

[17] S. Krishna, P. Bhattacharya, J. Singh, J. Urayama, T. B. Norris, P. J. McCann and K. Namjou, "A Room Temperature Unipolar Quantum Dot Intersubband Long-Wavelength Laser (l =13mm)", IEEE LEOS Annual Meeting, San Juan, Puerto Rico, November 2000.

[18] P. Bhattacharya, S. Krishna, J.D. Phillips, P.J. McCann and K. Namjou, "Carrier dynamics in self-organized quantum dots and their applications to long-wavelength sources and detectors", XIth International Conference on Molecular Beam Epitaxy, Beijing, China, September, 2000 (Invited).

[19] P. Bhattacharya, S. Krishna, J. Phillips, D. Klotzkin, P. J. McCann, "Quantum dot carrier dynamics and far-infrared devices", Photonics Taiwan, Taipei, Taiwan, July 2000 (Invited).

[20] S. Krishna, O. Qasaimeh, P. Bhattacharya, P. J. McCann and K. Namjou, "Spontaneous Far Infrared Emission from Self Organized In0.4Ga0.6As/GaAs Quantum Dots", Electronic Materials Conference, Denver, June 2000.

[21] S. Krishna, P. Bhattacharya, J. Urayama, T. Norris and P.J. McCann, "Carrier dynamics in self assembled InGaAs/GaAs quantum dots", IEEE/LEOS workshop on semiconductor lasers, San Francisco, May 2000 (Invited).

[22] P. Bhattacharya, S. Krishna, D. Zhu, J. Phillips, D. Klotzkin, O. Qasaimeh, W. D. Zhou, J. Singh, J. J. McCann, K. Namjou, "Optoelectronic Device Applications of Self-Organized In(Ga,Al)As/Ga(Al)As Quantum Dots", Spring Materials Research Society Meeting, San Francisco, CA, April 24-28, 2000 (Invited).

[23] Patrick J. McCann, I-Na Chao, and Khosrow Namjou, "Measurement of NO, COF2, and H2O with a single mid-infrared laser", Seventh Topical Meeting on Laser Applications to Chemical and Environmental Analysis (LACEA), Optical Society of America, Santa Fe, NM, February 11-14, 2000.

[24] Z. Shi, G. Xu, P. J. McCann, X. M. Fang, N. Dai, W. W. Bewley, C. L. Felix, I. Vurgaftman, and J. R. Meyer, "IV-VI compound semiconductor Mid-infrared Vertical Cavity Surface Emitting Lasers Grown by MBE", Fall Materials Research Society Meeting, Boston, MA, November 29 - December 3, 1999.

[25] X. M. Fang, K. Namjou, N. Dai, and P. J. McCann, "Molecular Beam Epitaxy of PbSrSe and PbSe/PbSrSe Multiple Quantum Well Structures for use in Mid-Infrared Light Emitting Devices", North American Conference on Molecular Beam Epitaxy, Banff, Canada, October 10-13, 1999.

[26] K. Namjou, P. J. McCann, B. Croley, E. Raasch, and W. T. Potter, "Breath Testing with a Mid-IR Laser Spectrometer", Application of Tunable Diode and Other Infrared Sources for Atmospheric Studies and Industrial Processing Monitoring II, SPIE Annual Meeting, Denver, CO, July 19-20, 1999.

[27] P. J. McCann, K. Namjou, and I. Chao, "Mid-IR Laser Spectroscopy of COF2 Between 1953.5 cm-1 and 1956.0 cm-1", 54th International Symposium on Molecular Spectroscopy, The Ohio State University, Columbus, OH, June 13-19, 1999.

[28] X. M. Fang, Z. Shi, P. J. McCann, S. J. Chung, and M. B. Santos, "Interfacial Reactions in the GaSb/PbSe Material System", American Physical Society Centennial Meeting in Atlanta GA, March 20-26, 1999.

[29] P. J. McCann, K. Namjou, and I. Chao, "Mid-IR Lasers and Their Use in Semiconductor Process Monitoring", 13th International Forum on Process Analytical Chemistry, San Antonio, TX, January 24-27, 1999. (Invited)

[30] H. Z. Wu, R. Salas, Jr., X. M. Fang, D. W. McAlister, and P. J. McCann, "Bonding of PbSe Grown by MBE on Si(111) and Characterization of the PbSe Growth Interface", Fall Materials Research Society Meeting, Boston, MA, November 30 - December 4, 1998.

[31] X. M. Fang, Z. Shi, P. J. McCann, S. J. Chung, and M. B. Santos, "XPS Study of Bonding at the GaSb/PbSe Interface", Fall Materials Research Society Meeting, Boston, MA, November 30 - December 4, 1998.

[32] X. M. Fang, Z. Shi, H. Z. Wu, P. J. McCann, N. Dai, "Molecular Beam Epitaxy of a PbSe-Based VCSEL Structure on BaF2 (111)", Fall Materials Research Society Meeting, Boston, MA, November 30 - December 4, 1998.

[33] D. W. McAlister, C. P. Li, X. M. Fang, K. Namjou, and P. J. McCann, "Metallurgical Bonding of (100)-Oriented Lead Selenide Layers to Copper and Fabrication of Cleaved Fabry-Perot Cavities", Fall Materials Research Society Meeting, Boston, MA, November 30 - December 4, 1998.

[34] Z. Shi, X. M. Fang, P. J. McCann, S. J. Chung, and M. B. Santos, "A New Mid-Infrared Laser on GaSb", Fall Materials Research Society Meeting, Boston, MA, November 30 - December 4, 1998.

[35] H. Z Wu, X. M. Fang, D. McAlister, R. Salas, Jr., and P. J. McCann, "MBE Growth of PbSe on BaF2-Coated Si(111) and Observation of the Growth Interface", North American Conference on Molecular Beam Epitaxy, State College, PA, October 4-7, 1998.

[36] X. M. Fang, H. Z. Wu, N. Dai, Z. Shi, and P. J. McCann, "Molecular Beam Epitaxy of Periodic BaF2/PbEuSe Layers on Si(111)", North American Conference on Molecular Beam Epitaxy, State College, PA, October 4-7, 1998.

[37] P. J. McCann, "Growth and Characterization of IV-VI Semiconductor Laser Structures on Silicon Substrates and Progress Towards Fabrication of High Operating Temperature Mid-IR Lasers", 2nd International Conference on Tunable Diode Laser Spectroscopy, Moscow, Russia, July 6-10, 1998. (Invited)

[38] P. J. McCann, H. K. Sachar, I. Chao, C. Li, and X. M. Fang, "Growth of Narrow Gap IV-VI Semiconductors on Si (100) Using Combination MBE and LPE", Sixteenth Conference on Crystal Growth and Epitaxy, Stanford Sierra Camp, Fallen Leaf Lake, CA, June 7-10, 1998.

[39] H. K. Sachar, I. Chao, X. M. Fang, and P. J. McCann, "Growth and Characterization of PbSe and Pb1-xSnxSe Layers on Si(100)", Fall Materials Research Society Meeting, Boston, MA, December 1-5, 1997.

[40] H. K. Sachar, P. J. McCann, and X. M. Fang, "Strain Relaxation in IV-VI Semiconductor Layers Grown on Silicon (100) Substrates", Fall Materials Research Society Meeting, Boston, MA, December 1-5, 1997.

[41] T. Chatterjee, P. J. McCann, and X. M. Fang, "Ca1-xEuxF2 Layers on p-Si(100) Grown Using MBE as Materials for Si-Based Optoelectronics", North American Conference on Molecular Beam Epitaxy, Ann Arbor, MI, October 5-8, 1997.

[42] X. M. Fang, I-Na Chao, B. N. Strecker, P. J. McCann, S. Yuan, W. K. Liu, and M. B. Santos, "MBE Growth of PbEuSe/PbSe Heterostructures on CaF2/Si(111)", North American Conference on Molecular Beam Epitaxy, Ann Arbor, MI, October 5-8, 1997.

[43] X. M. Fang, B. N Strecker, I. Chao, P. J. McCann, S. Yuan, W. K. Liu, and M. B. Santos, "MBE Growth of Pb1-xEuxSe/PbSe Heterostructures on CaF2/Si(111)", 8th International Conference on Narrow Gap Semiconductors, Shanghai, China, April 21-24, 1997.

[44] B. N Strecker, P. J. McCann, H. Sachar, X. M. Fang, R. J. Hauenstein, M. O'Steen, and M. B. Johnson, "LPE Growth of Crack-Free PbSe Layers on Si(100) Using MBE-Grown PbSe/BaF2/CaF2 Buffer Layers", 8th International Conference on Narrow Gap Semiconductors, Shanghai, China, April 21-24, 1997.

[45] X. M. Fang, P. J. McCann, W. K. Liu, B. N. Strecker, and M. B. Santos, "MBE Growth of PbSe/CaF2/Si(111) Heterostructures", American Physical Society Meeting in Kansas City, MO, March 17-21, 1997.

[46] W. K. Liu, X. M. Fang, P.J. McCann, B. N. Strecker, and M. B. Santos, "A Study of the PbSe/CaF2 Interface Grown on Si(111) by MBE", American Physical Society Meeting in Kansas City, MO, March 17-21, 1997.

[47] T. Chatterjee, C. Michellon, P. J. McCann, and X. M. Fang, "Europium Doped CaF2 as a Materials System for Blue-Violet Light Emitting Structures on Silicon", Fall Materials Research Society Meeting, Boston, MA, December 2-6, 1996.

[48] X. M. Fang, W. K. Liu, W. Shan, T. Chatterjee, P. J. McCann, M. B. Santos, and J. J. Song, "Optical Characterization of Europium-Doped Calcium Fluoride Thin Films Grown on Silicon by Molecular Beam Epitaxy", Fall Materials Research Society Meeting, Boston, MA, December 2-6, 1996.

[49] X. M. Fang, W. K. Liu, P. J. McCann, B. N. Strecker, and M. B. Santos, "XPS Study of the PbSe/CaF2 (111) Interface Grown on Si by MBE", Fall Materials Research Society Meeting, Boston, MA, December 2-6, 1996.

[50] K. R. Lewelling and P. J. McCann, "Progress Towards Development of a Thermoelectrically Cooled Lead-Salt Semiconductor Laser", International Symposium on Optical Sensing for Environmental and Process Monitoring, Air and Waste Management Association, Dallas, TX, November 6-8, 1996.

[51] P. J. McCann, X. M. Fang, W. K. Liu, B. N Strecker, and M. B. Santos, "MBE Growth of PbSe/CaF2/Si(111) Heterostructures", Ninth International Conference on Molecular Beam Epitaxy in Malibu, CA, August 5-9, 1996.

[52] W. K. Liu, X. M. Fang, J. Winesett, W. Ma, Z. Zhang, M. B. Santos, and P. J. McCann, "Large-Mismatch Heteroepitaxy of InSb on Si Substrates Using Fluoride Buffer Layers", Ninth International Conference on Molecular Beam Epitaxy, Malibu, CA, August 5-9, 1996.

[53] K. R. Lewelling and P. J. McCann, "Epitaxial Lift-Off Techniques Applied to Fabrication of IV-VI Semiconductor Tunable Infrared Lasers", 38th Electronic Materials Conference in Santa Barbara, CA, June 26-28, 1996.

[54] B. N. Strecker, X. M. Fang, K. R. Lewelling, and P. J. McCann, "LPE Growth of Crack-Free PbSe Layers on (100)-Oriented Silicon Using PbSe/BaF2/CaF2 Buffer Layers Grown by MBE", 38th Electronic Materials Conference in Santa Barbara, CA, June 26-28, 1996.

[55] T. Chatterjee, X. M. Fang, and P. J. McCann, "MBE Growth and Characterization of Europium-Doped CaF2 Layers on Silicon Substrates for Blue Light Emitting Devices", 38th Electronic Materials Conference in Santa Barbara, CA, June 26-28, 1996.

[56] X. M. Fang, W. K. Liu, T. Chatterjee, P. J. McCann, M. B. Santos, W. Shan, and J. J. Song, "Molecular Beam Epitaxy of Eu-Doped CaF2 and BaF2 on Si", American Physical Society Meeting in St. Louis, MO, March 18-22, 1996.

[57] I. Chao, S. Yuan, and P. J. McCann, "Growth and Characterization of PbSeTe/PbSnSeTe/PbSeTe Double Heterostructures", International Device Research Symposium, Charlottesville, VA, December 6-8, 1995.

[58] P. J. McCann and K. R. Lewelling, "Prospects for High Operating Temperature IV-VI Semiconductor Tunable Diode Lasers", International Symposium on Optical Sensing for Environmental and Process Monitoring, Air and Waste Management Association, San Francisco, CA, September 25-27, 1995.

[59] X. M. Fang, T. Chatterjee, P. J. McCann, W. K. Liu, M. B. Santos, W. Shan, and J. J. Song, "Molecular Beam Epitaxial Growth of Eu-Doped CaF2 and BaF2 on Silicon", North American Conference on Molecular Beam Epitaxy, College Park, MD, September 17-20, 1995.

[60] P. J. McCann, X. M . Fang, T. Chatterjee, W. Shan, and J. J. Song, "Blue Emission from Europium-Doped CaF2 Grown by MBE on (100) Silicon", American Association for Crystal Growth Conference, Fallen Leaf Lake, CA, June 4-7, 1995.

[61] X. M. Fang, P. J. McCann, W. K. Liu, "MBE Growth of CaF2 on (100) and (110) Silicon", American Association for Crystal Growth Conference, Fallen Leaf Lake, CA, June 4-7, 1995.

[62] W. K. Liu, X. M. Fang, P. J. McCann, "Growth Studies of CaF2 and BaF2/CaF2 Layers on (100) Silicon Using RHEED and SEM", American Physical Society Meeting, March 20, 1995, San Jose, CA.

[63] P. J. McCann, Lin Li, and John E. Furneaux, "FTIR Characterization of IV-VI Semiconductors Grown by LPE on (100) BaF2", International Conference on Narrow Gap Semiconductors, Santa Fe, New Mexico, January 9-12, 1995.

[64] S. Yuan, H. Krenn, G. Springholtz, G. Bauer, and P. J. McCann, "Magnetoreflectivity Study of Electron-LO Phonon Interaction in Pb1-xEuxTe and PbTe/Pb1-xEuxTe Multiquantum Wells", International Conference on Narrow Gap Semiconductors, Santa Fe, New Mexico, January 9-12, 1995.

[65] P. J. McCann, "Recent Progress in Growth and Characterization of IV-VI Semiconductors on Barium Fluoride", IV-VI Colloquium, Freiburg, Germany, October 18, 1994.

[66] T. Chatterjee and P. J. McCann, "Investigation of Charge Storage in Al/NdF3/SiO2/Si(111) Metal Insulator Semiconductor Structures", Electronic Materials Conference, Boulder, CO, June 22-24, 1994.

[67] P. J. McCann and S. Aanegola, "Liquid Phase Epitaxial Growth of PbSe0.78Te0.22 on BaF2, Epitaxy-Enabling Substrate Surface Reactions, and the Importance of Graphite Boat Design", American Association for Crystal Growth Conference, Fallen Leaf Lake, CA, June 7-10, 1994.

[68] P. J. McCann, S. Aanegola and J. E. Furneaux, "Electrical Properties of Thallium and Gold Doped PbSe0.78Te0.22 Layers Lattice Matched with BaF2 Substrates", Spring 1994 Electrochemical Society Meeting (State-of-the-Art Program on Compound Semiconductors), San Francisco, CA, May 26, 1994.

[69] M. F. Khodr, B. A. Mason, P. J. McCann, "Effects of Non-Parabolicity on Gain and Current Density in Lead-Salt Semiconductor Quantum Well Lasers", Conference on Lasers and Electro-Optics/International Quantum Electronics Conference, Anaheim, CA, May 12, 1994.

[70] P. J. McCann and L. Li, " Pb1-xSnxSe1-yTey Alloys Lattice Matched with BaF2: A New Materials System for Far-Infrared Device Fabrication", International Device Research Symposium, Charlottesville, VA, December 1-3, 1993.

[71] P. J. McCann, "The Effect of Composition Dependent Lattice Strain on the Chemical Potential of Tellurium in Pb1-xSnxSe1-yTey Quaternary Alloys", Spring Materials Research Society Meeting, San Francisco, CA, April 13, 1993.

[72] P. J. McCann, "The Role of Substrate Surface Reactions in Heteroepitaxy of PbSe on BaF2", Spring Materials Research Society Meeting, Anaheim, CA, May 1, 1991.

[73] P. J. McCann and C. G. Fonstad, "Observation of an Interfacial Reaction Between Selenium Vapor and the Barium Fluoride Surface: Implications for Heteroepitaxy of PbSe on BaF2", Electronic Materials Conference, Cambridge, MA June 21, 1989. Abstract published in J. Electronic Materials 18, 12 (1989).

[74] P. J. McCann and C. G. Fonstad, "LPE of PbSe on BaF2", State-of-the-Art Program on Compound Semiconductors, Honolulu, HI, October 19, 1987. Abstract published in J. Electrochem. Soc. 134, C577 (1987).

[75] P. J. McCann, J. Fuchs, Z. Feit and C. G. Fonstad, "Phase Equilibria and Liquid Phase Epitaxy Growth of PbSnSeTe Lattice Matched to PbSe", Electronic Materials Conference, Santa Barbara, CA, June 26, 1987.